Plan Optik AG
	GLASS-SI-COMPOUND-WAFERS SOG-Wafers Borosilicate Wafers with thin Si layer. Typical glass thickness 500-1000 microns. Typical Si thickness 50-200 microns. Edge grind for "bond gap" removal. Surfaces polished - can be bonded again. GOS-Wafers Silicon Wafers with thin borosilicate layer. Typical Si thickness 500-1000 microns. Typical glass thickness 50-200 microns. Edge grind for "bond gap" removal. Surfaces polished - can be bonded again. Edge-Grind For "bond gap" removal on Compound Wafers. Asymmetric edge processing of Si and Glass Wafers. Direct Bonding Glass-Glass-Compound-Wafers Si-Glass-Compound-Wafers Contact Carsten Wesselkamp Email: c.wesselkamp@planoptik.com Tel: +49 2664 5068 25 Fax: +49 2664 5068 91     BACK