Glass on silicon / silicon on glass wafers

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Glass on silicon / Silicon on glass wafers



Plan Optik offers these bonded wafers as a basic substrate for various MEMS applications. These wafers are then further processed by its customers using various structuring steps and other MEMS production processes.

In the case of GOS / SOG wafers, standard glass and silicon wafers are irreversibly bonded to each other by means of anodic bonding. One or both sides of the wafer stack can then subsequently be back thinned to the specified final thickness in each case using grinding and CMP processes adapted to the materials in question. The glass wafers employed are base wafers produced by Plan Optik itself, while the silicon wafers are widely available monocrystalline standard wafers by reputable manufacturers.

The minimum overall thickness of the entire wafer is about 250 µm, while the individual layers (glass or Si) can be thinned down by up to approx. 20 µm.

The edges of the GOS and SOG wafers produced by Plan Optik have a special edge grind, which removes the bondgap which results during bonding without reducing the diameter of the wafer. In this way all negative effects (contamination through particles, danger of breaking, handling problems) are eliminated.

Plan Optik manufactures GOS and SOG wafers according to customer specifications.

Applications



  • Base substrate for MEMS cap wafers for which a relatively thin glass layer (e.g. 50 µm) on a regular Si substrate (e.g. 500 µm) is required.
  • As a cap for optical MEMS, in which the Si will subsequently be partially opened, e.g. using KOH, to produce a cap.


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