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22.08.2017
Substrates and Carriers for GaAs, GaN, SiC and InP

Plan Optik AG, the leading manufacturer of glass and quartz wafers, now offers substrates and re-usable carriers for thin wafer handling of gallium arsenide (GaAs), gallium nitride (GaN), silicon carbide (SiC) and indium phosphide (InP) wafers.

These substrates from glass do have a coefficient of thermal expansion adapted to the above materials. The cte ranges from 3.3 to 7.2 ppm / K. This makes them suitable to replace, for example, sapphire wafers for handling of GaAs wafers at a similar performance but at a more favourable price per wafer.

Plan Optik has significant experience in the production of carriers for thin wafer handling since many years. Combining the material properties with the high expertise of Plan Optik in generating extremely low mechanical tolerances (thickness tolerance down to ±2 microns and total thickness variation as low as 1 micron) offers a huge number of applications on glass carriers and substrates.

Wafers and carriers from these materials are available in thicknesses between 200 and 900 microns - some of them at even larger thicknesses up to 3000 microns. Wafer and carrier sizes range from 1" to 300 mm.

In respect to the customers' needs, these wafers can additionally be perforated (for chemical release) by using Plan Optik's latest patterning technologies. Depending on the needs, more than 100,000 through holes of equal size can be implemented - providing a smooth and safe de-bonding.

Carriers for thin wafer handling can be re-used up to 50 times or can also stay in the final product because the applied materials are resistant to almost all chemicals used in semiconductor processing and final applications.